The electrical characterization of p-CdTe/n-Si (111) heterojunction diode

Razooqi, Mohammed A; Abdulameer, Ameer F; Hameed, Adwan N; Abdullaha, Rasha A; Sabbar, Ehsan I

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DC Field	Value	Language
dc.contributor.author	Razooqi, Mohammed A	-
dc.contributor.author	Abdulameer, Ameer F	-
dc.contributor.author	Hameed, Adwan N	-
dc.contributor.author	Abdullaha, Rasha A	-
dc.contributor.author	Sabbar, Ehsan I	-
dc.date.accessioned	2022-10-19T04:22:55Z	-
dc.date.available	2022-10-19T04:22:55Z	-
dc.date.issued	2012-07	-
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/3040	-
dc.description.abstract	Abstract: p-CdTe film has been deposited on n-Si (111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination. From current-voltage measurement at dark, the values of ideality factor are 2.9 and 3.8. The values of reverse saturation current are 3.77× 10-7 and 9.36× 10-8 Amperes.	en_US
dc.language.iso	en	en_US
dc.publisher	Advanced Materials Research Vol. 702	en_US
dc.subject	Island nucleation	en_US
dc.subject	Submonolayer growth	en_US
dc.subject	Anomalous diffusion	en_US
dc.subject	Critical island size	en_US
dc.title	The electrical characterization of p-CdTe/n-Si (111) heterojunction diode	en_US
dc.type	Article	en_US
Appears in Collections:	الهندسة الكهربائية

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