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http://localhost:8080/xmlui/handle/123456789/3042Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Alhelfi, Mohanad A. | - |
| dc.contributor.author | Ahmed, Naser M. | - |
| dc.contributor.author | Hashim, M. R. | - |
| dc.contributor.author | Al-Rawi, Ali Amer | - |
| dc.contributor.author | Hassan, Z. | - |
| dc.date.accessioned | 2022-10-19T05:38:32Z | - |
| dc.date.available | 2022-10-19T05:38:32Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.issn | ISSN 1943023X | - |
| dc.identifier.uri | http://localhost:8080/xmlui/handle/123456789/3042 | - |
| dc.description.abstract | Abstract: In this study the optimum parameters of GaN M-S-M photodetector are discussed. The evaluation of the photodetector depends on many parameters, the most of the important parameters the quality of the GaN film and others depend on the geometry of the interdigited electrode. In this simulation work using MATLAB software with consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode spacings (S) and widths (W) reveals conclusive results in device design. The optimum interelectrode design for interdigitated MSM-PD has been specified and evaluated by effect on quantum efficiency and responsivity. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | AIP Conference Proceedings 1733, 020028 | en_US |
| dc.title | Simulation of optimum parameters for GaN MSM UV photodetector | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | الهندسة الكهربائية | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Abstract8.pdf | 11.7 kB | Adobe PDF | View/Open |
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