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dc.contributor.authorN. Thameel, Mahir-
dc.date.accessioned2022-10-23T21:02:32Z-
dc.date.available2022-10-23T21:02:32Z-
dc.date.issued2022-05-11-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/5725-
dc.description.abstractGood conductivity, suitable transparency and uniform layers of graphene thin film can be produced by chemical vapour deposition (CVD) at low temperature and utilised as a transpar ent electrode in organic photovoltaics. Using chlorobenzene trapped in poly(methyl methacrylate) (PMMA) polymer as the carbon source, growth temperature (Tgrowth) of 600 ◦C at hydrogen (H2 ) flow of 75 standard cubic centimetres per minute (sccm) was used to prepare graphene by CVD catalytically on copper (Cu) foil substrates. Through the Tgrowth of 600 ◦C, we observed and iden tified the quality of the graphene films, as characterised by Raman spectroscopy. Finally, P3HT (poly (3-hexylthiophene-2, 5-diyl)): PCBM (phenyl-C61-butyric acid methyl ester) bulk heterojunc tion solar cells were fabricated on graphene-based window electrodes and compared with indium tin oxide (ITO)-based devices. It is interesting to observe that the OPV performance is improved more than 5 fold with increasing illuminated areas, hinting that high resistance between graphene domains can be alleviated by photo generated chargesen_US
dc.publisherCoatingsen_US
dc.subject: graphene thin film; low-temperature CVD; organic photovoltaicsen_US
dc.titleLow-Temperature CVD-Grown Graphene Thin Films as Transparent Electrode for Organic Photovoltaicsen_US
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