Please use this identifier to cite or link to this item:
http://localhost:8080/xmlui/handle/123456789/6051| Title: | Studying the Different Effects of Gamma and x-ray Irradiation on Electrical Properties of silicon diode type 1N1405. |
| Authors: | M. Najim, Jassim |
| Keywords: | Gamma ray , Bias voltage , silicon |
| Issue Date: | 2-Jan-2009 |
| Publisher: | Int.J.Nanoelectronics and Materials |
| Abstract: | The silicon diode types 1N1405 subjected to different types of radiation like (x-ray and γ-radiation), it is measured by the forward and reverse bias voltage before and after irradiation, so this research study the different effect of two types of radiation on electrical properties of the diode . |
| URI: | http://localhost:8080/xmlui/handle/123456789/6051 |
| Appears in Collections: | قسم الفيزياء |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Studying the different effects of gamma - Jassim Najim.pdf | 243.6 kB | Adobe PDF | View/Open |
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