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dc.contributor.authorM. Najim, Jassim-
dc.date.accessioned2022-10-24T13:10:45Z-
dc.date.available2022-10-24T13:10:45Z-
dc.date.issued2009-01-02-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/6051-
dc.description.abstractThe silicon diode types 1N1405 subjected to different types of radiation like (x-ray and γ-radiation), it is measured by the forward and reverse bias voltage before and after irradiation, so this research study the different effect of two types of radiation on electrical properties of the diode .en_US
dc.publisherInt.J.Nanoelectronics and Materialsen_US
dc.subjectGamma ray , Bias voltage , siliconen_US
dc.titleStudying the Different Effects of Gamma and x-ray Irradiation on Electrical Properties of silicon diode type 1N1405.en_US
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