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http://localhost:8080/xmlui/handle/123456789/6052Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | M. Najim, Jassim | - |
| dc.date.accessioned | 2022-10-24T13:13:40Z | - |
| dc.date.available | 2022-10-24T13:13:40Z | - |
| dc.date.issued | 2008-01-04 | - |
| dc.identifier.uri | http://localhost:8080/xmlui/handle/123456789/6052 | - |
| dc.description.abstract | "The diode 1N1405 type silicon is subjected to different levels of energy and time irradiation. We have about three times; at every time we have measured the forward and reverse bias voltage of the diode to know what is the difference between the electrical properties of the same diode without irradiation of x-ray. " | en_US |
| dc.publisher | Int. J. Nanoelectronics and Materials | en_US |
| dc.subject | X-ray, Electrical Properties, Semiconductors. | en_US |
| dc.title | Studying the Effect of X-ray Radiation on the Electrical Properties of Diodes 1N1405 | en_US |
| Appears in Collections: | قسم الفيزياء | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Studying the effect of X-ray - Jassim Najim.pdf | 210.29 kB | Adobe PDF | View/Open |
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