"RESPONSIVITY ENHANCEMENT OF LUTETIUM OXIDE DOPED –NiO THIN FILMS "

Abstract

"Metal oxide nanoparticles doped with rare earth lutetium oxide (Lu 2 O 3 ) at 0%, 2%, 4%, and 6% are deposited on porous silicon (PS) substrates by pulsed laser deposition (PLD) technique for the manufacture of ultraviolet (UV) detector. An electrochemical etching process (ECE) is then performed to fabricate porous silicon (PS), which uses a substrate ntype Si with orientation <111>, at an etching current of 15 mA/cm 2 and constant etching time of 20 min. Meanwhile, the nickel oxide (NiO)films with doping ratio of Lu 2 O 3 have polycrystalline cubic structures, as indicated by the X-ray diffraction patterns of the films.Result shows that the mean crystallite size of NiO decreases with increasing doping ratio. The direct energy gap (E g ) of NiO is 3.4 eV and increases with increasing doping ratio. UV detector is fabricated using Au/NiO:Lu 2 O 3 /PS at a ratio of 2% and 6%, respectively. The sample doped with 6% lutetium exhibit good sensitivity approximately 126% . "