CHARACTERIZATION OF CuPcTs/PS for NO2 GAS SENSOR

Abstract

"This work reviews the use of porous silicon (PS) (P-type) as a nanomaterial which is extensively investigated and utilized for metal-deposition within the porous structures. Emphasis will be put on self-arranged mesoporous silicon, offering a quasi-regular pore arrangement, employed as template for filling with Copper phthalociyanine Tetraselfonic acite tetraselfonic salt (CuPcTs) organic semiconductor. AFM images show decreasing in average diameter with increasing of etching current from 10 mA to 50 mA. The optical absorption spectrum of the CuPcTs film shows the absorption peaks of B and Q bands at around 330 and 620 nm, while for annealing samples the peaks shifted to 337 and 578 for B and Q respectively. The scanning electron microscopy of all films of CuPcTs reveals nano grain size with diameter less than 100 nm. The sensitivity is reduced gradually with increasing of operating temperature. Among all the values of etching current, a 40 mA exhibit the peak sensitivity of 98% at 500C operating temperature. The response value (S) of film to 100 ppm NO2 was 12sec. Furthermore, fast recovery rate, long-term stability were also observed over a concentration range from 5 to 100 ppm. "