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dc.contributor.authorN. Thameel, Mahir-
dc.date.accessioned2022-11-15T19:01:44Z-
dc.date.available2022-11-15T19:01:44Z-
dc.date.issued2016-
dc.identifier.issn1998-0124-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/8836-
dc.description.abstractA new type of lead-free, formamidinium (FA)-based halide perovskites, FASnI2Br, are investigated as light-harvesting materials for low-temperature processed p–i–n heterojunction solar cells with different configurations. The FASnI2Br perovskite, with a band-gap of 1.68 eV, exhibits optimal photovoltaic performance after low-temperature annealing at 75 ° C. By using C60 as electron-transport layer, the device yields a hysteresis-less power conversion efficiency of 1.72%. The possible use of an inorganic MoOx film as a new type of independent hole-transport layer for the present tin-based perovskite solar cells is also demonstrated.en_US
dc.publisherNano Researchen_US
dc.subjectlead-free perovskite, perovskite solar cells, low-temperature process, fullerene, molybdenum oxideen_US
dc.titleLow-temperature processed solar cells with formamidinium tin halide perovskite/fullerene heterojunctionsen_US
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